ECH8660-TL-H parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Model:

ECH8660-TL-H

Description:

MOSFET N/P-CH 30V 4.5A 8ECH

Stock:

20033

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.12

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Parameters

Current at 25 ° C - continuous drain (Id)

4.5A

Drain source voltage (Vdss)

30V

FET Type

N and P Channel

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

4.4nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

240pF @ 10V

On resistance (maximum) for different Ids and Vgs

59 mΩ @ 2A,10V

Power - maximum

1.5W

Vgs (th) (maximum) for different Ids

packing

TR,TR,CT,CT,bulk

series

working temperature

150°C(TJ)

Encapsulation/Housing

8-SMD,feedthrough

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载ECH8660-TL-H.pdf

ECH8660-TL-H（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory20033,Price reference "real-time change" China/Hongkong。 ECH8660-TL-H package/specs, Download ECH8660-TL-H、Datasheet。